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BAT254 Folha de dados(PDF) 4 Page - NXP Semiconductors |
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BAT254 Folha de dados(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1999 Apr 22 4 Philips Semiconductors Product specification Schottky barrier diode BAT254 GRAPHICAL DATA handbook, halfpage 10 IF VF (V) 3 10 (mA) 2 10 1 10 1 1.2 0.8 0.4 0 MSA892 (3) (2) (1) (3) (2) (1) (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. Fig.2 Forward current as a function of forward voltage; typical values. 010 20 30 V (V) R 10 3 I R ( µA) 10 2 10 1 10 1 (1) (2) (3) MSA893 (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. Fig.3 Reverse current as a function of reverse voltage; typical values. 010 20 30 0 5 10 15 V (V) R C d (pF) MSA891 f = 1 MHz; Tamb =25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. Fig.5 Reverse recovery definitions. handbook, halfpage 90% 10% tf Q dI dt t IF IR MRC129 - 1 F r |
Nº de peça semelhante - BAT254 |
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Descrição semelhante - BAT254 |
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