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BAT720 Folha de dados(PDF) 2 Page - NXP Semiconductors |
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BAT720 Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 May 26 2 Philips Semiconductors Product specification Schottky barrier diode BAT720 FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits. DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a small SOT23 plastic SMD package. PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode Fig.1 Simplified outline (SOT23) and symbol. Marking code: L6p = made in Hong Kong; L6t = made in Malaysia . handbook, halfpage MAM394 2 n.c. 1 3 Top view 12 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 40 V IF continuous forward current − 500 mA IFSM non-repetitive peak forward current tp < 10 ms − 2A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C |
Nº de peça semelhante - BAT720 |
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Descrição semelhante - BAT720 |
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