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BC807-16W Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BC807-16W
Descrição Electrónicos  PNP general purpose transistor
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC807-16W Folha de dados(HTML) 2 Page - NXP Semiconductors

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1999 May 18
2
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complement: BC817W.
MARKING
Note
1.
∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
BC807W
5D
BC807-25W
5B
BC807-16W
5A
BC807-40W
5C
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−50
V
VCEO
collector-emitter voltage
open base; IC = −10 mA
−−45
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−500
mA
ICM
peak collector current
−−1A
IBM
peak base current
−−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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