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BDX53B Folha de dados(PDF) 2 Page - Bourns Electronic Solutions |
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BDX53B Folha de dados(HTML) 2 Page - Bourns Electronic Solutions |
2 / 5 page BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS 2 PRODU CT INFORMA TION MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 100 mA IB = 0 (see Note 3) BDX53 BDX53A BDX53B BDX53C 45 60 80 100 V ICEO Collector-emitter cut-off current VCE = 30 V VCE = 30 V VCE = 40 V VCE = 50 V IB =0 IB =0 IB =0 IB =0 BDX53 BDX53A BDX53B BDX53C 0.5 0.5 0.5 0.5 mA ICBO Collector cut-off current VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V IE =0 IE =0 IE =0 IE =0 BDX53 BDX53A BDX53B BDX53C 0.2 0.2 0.2 0.2 mA IEBO Emitter cut-off current VEB = 5 V IC =0 2 mA hFE Forward current transfer ratio VCE = 3 V IC = 3 A (see Notes 3 and 4) 750 VBE(sat) Base-emitter saturation voltage IB = 12 mA IC = 3 A (see Notes 3 and 4) 2.5 V VCE(sat) Collector-emitter saturation voltage IB = 12 mA IC = 3 A (see Notes 3 and 4) 2 V VEC Parallel diode forward voltage IE = 3 A IB = 0 2.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 2.08 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = 3 A VBE(off) = -4.5 V IB(on) = 12 mA RL = 10 Ω IB(off) = -12 mA tp = 20 µs, dc ≤ 2% 1µs toff Turn-off time 5µs |
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