BU48 datasheet(1/7 Pages) BOURNS

Nome de Peças	BU48

Descrição Electrónicos	NPN SILICON POWER TRANSISTORS

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Fabricante Electrônico	BOURNS [Bourns Electronic Solutions]

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BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

P R O D UCT

INFORMA TION

1

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

● Rugged Triple-Diffused Planar Construction

● 15 A Continuous Collector Current

● 1000 Volt Blocking Capability

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTE

1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.

RATING

SYMBOL

VALUE

UNIT

Collector-emitter voltage (VBE = 0 V)

BUV48

BUV48A

VCES

850

1000

V

Collector-emitter voltage (RBE = 10 Ω)

BUV48

BUV48A

VCER

850

1000

V

Collector-emitter voltage (IB = 0)

BUV48

BUV48A

VCEO

400

450

V

Continuous collector current

IC

15

A

Peak collector current (see Note 1)

ICM

30

A

Continuous base current

IB

4A

Peak base current

IBM

20

A

Non repetitive accidental peak surge current

ICSM

55

A

Continuous device dissipation at (or below) 25°C case temperature

Ptot

125

W

Operating junction temperature range

Tj

-65 to +150

°C

Storage temperature range

Tstg

-65 to +150

°C

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

B

C

E

1

2

3

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