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BCP69-25 Folha de dados(PDF) 3 Page - NXP Semiconductors

Nome de Peças BCP69-25
Descrição Electrónicos  PNP medium power transistor
Download  8 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCP69-25 Folha de dados(HTML) 3 Page - NXP Semiconductors

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1999 Apr 08
3
Philips Semiconductors
Product specification
PNP medium power transistor
BCP69
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
91
K/W
Rth j-s
thermal resistance from junction to soldering point
10
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −25 V
−−−100 nA
IE = 0; VCB = −25 V; Tj = 150 °C
−−−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100 nA
hFE
DC current gain
IC = −5 mA; VCE = −10 V
50
−−
IC = −500 mA; VCE = −1 V; see Fig.2
85
375
IC = −1 A; VCE = −1 V; see Fig.2
60
−−
DC current gain
IC = −500 mA; VCE = −1 V; see Fig.2
BCP69-16
100
250
BCP69-25
160
375
VCEsat
collector-emitter saturation voltage IC = −1 A; IB = −100 mA
−−−500 mV
VBE
base-emitter voltage
IC = −5 mA; VCE = −10 V
−−620 −
mV
IC = −1 A; VCE = −1V
−−−1V
Cc
collector capacitance
IE =ie = 0; VCB = −5 V; f = 1 MHz
48
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 40
−−
MHz
DC current gain ratio of the
complementary pairs
I
C = 0.5 A; VCE =1V
−−
1.6
h
FE1
h
FE2
-----------


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