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BDX47 Folha de dados(PDF) 5 Page - NXP Semiconductors |
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BDX47 Folha de dados(HTML) 5 Page - NXP Semiconductors |
5 / 8 page 1997 Jul 02 5 Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 Fig.2 DC current gain; typical values. VCE = −10 V. handbook, full pagewidth 0 6000 2000 1000 3000 4000 5000 MGD839 −10−1 −1 −10 −102 −103 hFE IC (mA) Fig.3 Test circuit for switching times. Vi = −10 V; T = 200 µs; tp =6 µs; tr =tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB =10kΩ; RC =18 Ω. VBB = 1.8 V; VCC = −10.7 V. Oscilloscope input impedance Zi =50 Ω. andbook, full pagewidth RC R2 R1 DUT MGD624 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB Vi VCC |
Nº de peça semelhante - BDX47 |
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Descrição semelhante - BDX47 |
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