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BF1100WR Folha de dados(PDF) 4 Page - NXP Semiconductors

Nome de Peças BF1100WR
Descrição Electrónicos  Dual-gate MOS-FET
Download  14 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF1100WR Folha de dados(HTML) 4 Page - NXP Semiconductors

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1995 Apr 25
4
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
Notes
1. RG1 connects gate 1 to VGG = 9 V; see Fig.26.
2. RG1 connects gate 1 to VGG = 12 V; see Fig.26.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
350
K/W
Rth j-s
thermal resistance from junction to soldering point
Ts =91 °C; note 2
210
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S =VDS = 0; IG1-S = 1 mA
13.2
20
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S =VDS = 0; IG2-S = 1 mA
13.2
20
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S =VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S =VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S =4V; VDS =9V;
ID =20 µA
0.3
1
V
VG2-S =4V; VDS =12V;
ID =20 µA
0.3
1
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S =4V; VDS =9V;
ID =20 µA
0.3
1.2
V
VG1-S =4V; VDS =12V;
ID =20 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =9V;
RG1 = 180 kΩ; note 1
813
mA
VG2-S =4V; VDS =12V;
RG1 = 250 kΩ; note 2
813
mA
IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S =12V
50
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =12V
50
nA


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