BF1101WR datasheet(6/16 Pages) PHILIPS

Nome de Peças	BF1101WR

Descrição Electrónicos	N-channel dual-gate MOS-FETs

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Fabricante Electrônico	PHILIPS [NXP Semiconductors]

Página de início	http://www.nxp.com

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6 / 16 page

1999 May 14

6

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FETs

BF1101; BF1101R; BF1101WR

Fig.9

Drain current as a function of gate 1 current;

typical values.

VDS =5V.

VG2-S =4V.

Tj =25 °C.

handbook, halfpage

0

20

8

12

16

4

0

10

MGS303

20

30

40

50

ID

(mA)

IG1 (µA)

Fig.10 Drain current as a function of gate 1

supply voltage (= VGG); typical values.

VDS = 5 V; VG2-S = 4 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG); see Fig.21.

handbook, halfpage

0

15

10

5

0

1

MGS304

23

5

4

ID

(mA)

VGG (V)

Fig.11 Drain current as a function of gate 1 (= VGG)

and drain supply voltage; typical values.

VG2-S = 4 V; Tj =25 °C.

RG1 connected to VGG; see Fig.21.

handbook, halfpage

0

20

8

12

16

4

0

2

468

ID

(mA)

VGG = VDS (V)

RG1 = 47 kΩ 68 kΩ

82 k

Ω

100 k

Ω

120 k

Ω

150 k

Ω

180 k

Ω

220 k

Ω

MGS305

VDS = 5 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG); see Fig.21.

Fig.12 Drain current as a function of gate 2 voltage;

typical values.

handbook, halfpage

0

8

12

16

4

0

2

MGS306

46

ID

(mA)

VG2-S (V)

4.5 V

4 V

3.5 V

3 V

VGG = 5 V

Nº de peça semelhante - BF1101WR

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NXP Semiconductors	BF1101WR	399Kb / 15P	N-channel dual-gate MOS-FETs 1999 May 14

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BF1101WR Folha de dados(PDF) 6 Page - NXP Semiconductors

BF1101WR Folha de dados(HTML) 6 Page - NXP Semiconductors

Nº de peça semelhante - BF1101WR

Descrição semelhante - BF1101WR

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