AD8502 datasheet(3/6 Pages) AD

Nome de Peças	AD8502

Descrição Electrónicos	1關 Micropower Precision CMOS Operational Amplifier

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Fabricante Electrônico	AD [Analog Devices]

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Preliminary Technical Data

AD8502/AD8504

Rev. PrB | Page 3 of 6

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

@ VS = +5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.

Table 1.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

0 V < VCM < 5 V

0.5

3

mV

Offset Voltage Drift

∆VOS/∆T

−40°C < TA < +85°C

10

μV/°C

Input Voltage Range

−0.3

+5.3

V

Input Bias Current

IB

1

10

pA

−40°C < TA < +85°C

100

pA

−40°C < TA < +125°C

600

pA

Input Offset Current

IOS

0.5

5

pA

−40°C < TA < +85°C

50

pA

−40°C < TA < +125°C

100

pA

Common-Mode Rejection Ratio

CMRR

0 V < VCM < 5 V

75

dB

−40°C < TA < +85°C

65

dB

Large Signal Voltage Gain

AVO

0.1 V < VOUT < 4.9 V

98

dB

0.1 V < VOUT < 4.9 V; −40°C < TA < +85°C

80

dB

Input Capacitance

CDIFF

2

pF

CCM

4.5

pF

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

RLOAD = 100 kΩ to GND

4.970

V

RLOAD = 10 kΩ to GND

4.900

V

Output Voltage Low

VOL

RLOAD = 100 kΩ to VS

5

mV

RLOAD = 10 kΩ to VS

20

mV

Short-Circuit Current

ISC

VOUT = GND

mA

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

1.8 V < VS < 5 V

90

dB

−40°C < TA < +85°C

70

dB

Supply Current/Amplifier

ISY

VO = VS/2

1

μA

−40°C < TA < +85°C

1.5

μA

−40°C < TA < +125°C

2

μA

DYNAMIC PERFORMANCE

Slew Rate

SR

0.004

V/μs

Gain Bandwidth Product

GBP

7

kHz

Phase Margin

ØO

60

Degrees

NOISE PERFORMANCE

Peak-to-Peak Noise

0.1 Hz to 10 Hz

6

μV p-p

Voltage Noise Density

en

f = 1 kHz

190

nV/√Hz

Current Noise Density

in

f = 1 kHz

0.1

pA/√Hz

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