1999 Apr 21

2

Philips Semiconductors

Product specification

NPN high-voltage transistors

BF458; BF459

FEATURES

• Low current (max. 100 mA)

• High voltage (max. 300 V).

APPLICATIONS

• Intended for video output stages in black-and-white and

in colour television receivers.

DESCRIPTION

NPN transistors in a TO-126; SOT32 plastic package.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector, connected to mounting base

3

base

Fig.1

Simplified outline (TO-126; SOT32)

and symbol.

handbook, halfpage

MAM254

12

3

Top view

1

2

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BF458

−

250

V

BF459

−

300

V

collector-emitter voltage

open base

BF458

−

250

V

BF459

−

300

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

100

mA

peak collector current

−

300

mA

peak base current

−

100

mA

total power dissipation

−

6W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C