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BC847BV Folha de dados(PDF) 5 Page - NXP Semiconductors |
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BC847BV Folha de dados(HTML) 5 Page - NXP Semiconductors |
5 / 15 page BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 5 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. fT transition frequency VCE =5V; IC =10mA; f = 100 MHz 100 250 - MHz NF noise figure VCE =5V; IC = 0.2 mA; RS =2kΩ; f = 10 Hz to 15.7 kHz - 2.8 - dB VCE =5V; IC = 0.2 mA; RS =2kΩ; f = 1 kHz; B = 200 Hz - 3.3 - dB Per device hFE1/hFE2 hFE matching VCE =5V; IC =2mA [3] 0.9 1 - VBE1−VBE2 VBE matching VCE =5V; IC =2mA [4] -- 2 mV Table 8. Characteristics …continued Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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