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BC847BV Folha de dados(PDF) 6 Page - NXP Semiconductors |
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BC847BV Folha de dados(HTML) 6 Page - NXP Semiconductors |
6 / 15 page BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 6 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors Tamb =25 °CVCE =5V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Fig 1. Collector current as a function of collector-emitter voltage; typical values Fig 2. DC current gain as a function of collector current; typical values IC/IB =20 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Fig 3. Base-emitter saturation voltage as a function of collector current; typical values Fig 4. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa532 VCE (V) 010 8 46 2 0.08 0.12 0.04 0.16 0.20 IC (A) 0 IB (mA) = 4.50 2.70 3.15 4.05 3.60 0.45 0.90 1.35 1.80 2.25 006aaa533 200 400 600 hFE 0 IC (mA) 10−2 103 102 10−1 10 1 (3) (1) (2) 006aaa534 IC (mA) 10−1 103 102 110 0.5 0.9 1.3 0.3 0.7 1.1 VBEsat (V) 0.1 (1) (2) (3) 006aaa535 1 10−1 10 VCEsat (V) 10−2 IC (mA) 10−1 103 102 110 (1) (2) (3) |
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