1999 Jun 29

2

Philips Semiconductors

Preliminary specification

N-channel junction FET

BF862

FEATURES

• High transition frequency for excellent sensitivity in

AM car radios

• High transfer admittance.

APPLICATIONS

• Pre-amplifiers in AM car radios.

DESCRIPTION

Silicon N-channel symmetrical junction field-effect

transistor in a SOT23 package.

Drain and source are interchangeable.

PINNING SOT23

PIN

DESCRIPTION

1

source

2drain

3

gate

Fig.1 SOT23.

handbook, halfpage

MSB003

Top view

12

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source voltage

−−

20

V

gate-source cut-off voltage

−−0.7

−

V

drain-source current

10

−

25

mA

total power dissipation

≤ 92 °C

−−

225

mW

transfer admittance

30

40

−

mS

junction temperature

−−

150

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.