Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

STC04IE170HV Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STC04IE170HV
Descrição Electrónicos  Emitter switched bipolar transistor ESBT짰 1700V - 4A - 0.17 W
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STC04IE170HV Folha de dados(HTML) 4 Page - STMicroelectronics

  STC04IE170HV Datasheet HTML 1Page - STMicroelectronics STC04IE170HV Datasheet HTML 2Page - STMicroelectronics STC04IE170HV Datasheet HTML 3Page - STMicroelectronics STC04IE170HV Datasheet HTML 4Page - STMicroelectronics STC04IE170HV Datasheet HTML 5Page - STMicroelectronics STC04IE170HV Datasheet HTML 6Page - STMicroelectronics STC04IE170HV Datasheet HTML 7Page - STMicroelectronics STC04IE170HV Datasheet HTML 8Page - STMicroelectronics STC04IE170HV Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 11 page
background image
Electrical characteristics
STC04IE170HV
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS =VGS =0V)
VCS(SS) =1700V
100
µA
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
10
µA
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =17V
100
µA
IGS(OS)
Gate-source leakage
(VBS =0V)
VGS = ± 17V
100
nA
VCS(ON)
Collector-source ON
voltage
VGS =10V IC =4A
IB =0.8A
VGS =10V IC =1.5A IB =0.15A
0.7
0.6
1.5
1.4
V
V
hFE
DC current gain
VCS =1V
VGS =10V IC =4A
VCS =1V VGS =10V IC =1.5A
4
7
5.5
11
VBS(ON)
Base-source ON
voltage
VGS =10V IC =4A
IB =0.8A
VGS =10V IC =1.5A IB =0.15A
1.3
0.9
1.5
1.1
V
V
VGS(th)
Gate threshold voltage
VBS =VGS IB =250µA
23
4
V
Ciss
Input capacitance
VCS =25V f =1MHz
VGS=0V
510
pF
QGS(tot)
Gate-source Charge
VGS=10V
3.9
nC
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =1360V
tp =4µs
IC =2A
IB =0.4A
770
10
ns
ns
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =1360V
tp =4µs
IC =2A
IB =0.2A
410
10
ns
ns
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VCC =VClamp =400V
VGS =10V
IC =1.5A
IB = 0.3A
tpeak =500ns
RG =47Ω
IBpeak =3A (2IC )
5.36
V


Nº de peça semelhante - STC04IE170HV

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics
STC04IE170HV STMICROELECTRONICS-STC04IE170HV Datasheet
255Kb / 11P
   Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?
STC04IE170HV_0611 STMICROELECTRONICS-STC04IE170HV_0611 Datasheet
255Kb / 11P
   Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?
More results

Descrição semelhante - STC04IE170HV

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics
STC06IE170HV STMICROELECTRONICS-STC06IE170HV Datasheet
144Kb / 8P
   Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?
STC04IE170HV_0611 STMICROELECTRONICS-STC04IE170HV_0611 Datasheet
255Kb / 11P
   Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?
STC03DE170HP STMICROELECTRONICS-STC03DE170HP_07 Datasheet
281Kb / 9P
   Hybrid emitter switched bipolar transistor ESBT짰 1700V - 3A - 0.33 W
STC03DE170HV STMICROELECTRONICS-STC03DE170HV_07 Datasheet
254Kb / 9P
   Hybrid emitter switched bipolar transistor ESBT짰 1700V - 3A - 0.33 W
STC04IE170HP STMICROELECTRONICS-STC04IE170HP Datasheet
282Kb / 11P
   Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17OHM
STC05DE120HV STMICROELECTRONICS-STC05DE120HV Datasheet
229Kb / 9P
   Hybrid emitter switched bipolar transistor ESBT짰 1200V - 5A - 0.18 ohm
STC03DE170HP STMICROELECTRONICS-STC03DE170HP Datasheet
313Kb / 11P
   Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55OHM
STC03DE170HV STMICROELECTRONICS-STC03DE170HV_06 Datasheet
286Kb / 11P
   Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55 OHM
STE70IE120 STMICROELECTRONICS-STE70IE120 Datasheet
144Kb / 7P
   Monolithic Emitter Switched Bipolar Transistor ESBT짰 1200 V - 70 A - 0.014 廓 Power Module
STC08IE150HV STMICROELECTRONICS-STC08IE150HV_07 Datasheet
276Kb / 11P
   Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08?
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com