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BF992 Folha de dados(PDF) 6 Page - NXP Semiconductors |
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BF992 Folha de dados(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 1999 Aug 11 6 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET BF992 Fig.7 Input admittance as a function of frequency; typical values. VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C. handbook, halfpage MGE794 102 10−2 10 102 103 10−1 1 10 bis gis yis (mS) f (MHz) handbook, halfpage MGE793 10 1 10−1 10−2 10 102 103 bos gos yos (mS) f (MHz) VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C. Fig.8 Output admittance as a function of frequency; typical values. Fig.9 Forward transfer admittance as a function of frequency; typical values. handbook, halfpage 25 0 MGE795 10 102 103 5 10 15 20 Yfs (mS) f (MHz) −bfs gfs VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C. Fig.10 Reverse transfer admittance as a function of frequency; typical values. handbook, halfpage 120 0 MGE796 40 80 10 102 103 yrs ( µS) grs −brs f (MHz) VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C. |
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Descrição semelhante - BF992 |
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