TPCA8010-H

2004-3-2

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(π-MOSV)

TPCA8010-H

High Speed and High Efficiency DC-DC Converters

• Small footprint due to small and thin package

• High speed switching

= 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

200

V

200

V

Gate-source voltage

±20

V

DC

(Note 1)

5.5

Drain current

Pulsed (Note 1)

11

A

Drain power dissipation

(Tc=25℃)

15

W

Drain power dissipation

(t

= 10 s)

(Note 2a)

2.8

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

1.6

W

Single pulse avalanche energy

(Note 3)

19

mJ

Avalanche current

5.5

A

Repetitive avalanche energy

(Tc=25℃) (Note 4)

1.5

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next

page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

0.5±0.1

1.27

0.4±0.1

0.595

0.05 M

A

1

4

5

8

0.15±0.05

0.8±0.1

1.1±0.2

4.25±0.2

1

4

5

8

5.0±0.2

0.95±0.05

S

0.05

S

A

0.166±0.05

JEDEC

?

JEITA

?

TOSHIBA

?

Weight: 0.08 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4

1,2,3：SOURCE

4：GATE

5,6,7,8：DRAIN

TENTATIVE