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2SJ681 Folha de dados(PDF) 1 Page - Toshiba Semiconductor

Nome de Peças 2SJ681
Descrição Electrónicos  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
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2SJ681
2006-06-30
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ681
Relay Drive, DC−DC Converter and Motor Drive
Applications
4-V gate drive
Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = −100 µA (max) (VDS = −60 V)
Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
−5
A
Drain current
Pulse(Note 1)
IDP
−20
A
Drain power dissipation
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
−5
A
Repetitive avalenche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH,
RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
0.6±0.15
0.8 MAX.
12
1.1 MAX.
0.6±0.15
0.6 MAX
0.6 MAX.
1.1±0.2
6.5±0.2
2.3
2.3
5.2±0.2
0.9


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