Si3853DV

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Document Number: 70979

S-61846—Rev. A, 04-Oct-99

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

2

1

0.1

0.01

1

10

600

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

100

1. Duty Cycle, D =

Notes:

4. Surface Mounted

0.01

0

1

6

8

2

4

10

30

0.1

Single Pulse Power, Junction-to-Ambient

Time (sec)

0

0.1

0.2

0.3

0.4

0.5

0.6

012345

On-Resistance vs. Gate-to-Source Voltage

1.2

1.5

0.1

1

10

0.00

0.3

0.6

0.9

Source-Drain Diode Forward Voltage

–0.4

–0.2

0.0

0.2

0.4

0.6

–50

–25

0

25

50

75

100

125

150

Threshold Voltage