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FDD4685 Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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FDD4685 Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDD4685 Rev.B www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V –40 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250µA, referenced to 25°C –33 mV/°C IDSS Zero Gate Voltage Drain Current VDS = –32V, VGS = 0V –1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA –1 –1.6 –3 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250µA, referenced to 25°C 4.9 mV/°C rDS(on) Static Drain to Source On Resistance VGS = –10V, ID = –8.4A 23 27 m Ω VGS = –4.5V, ID = –7A 30 35 VGS = –10V, ID = –8.4A, TJ=125°C 33 42 gFS Forward Transconductance VDS = –5V, ID = –8.4A 23 S (Note 2) Dynamic Characteristics Ciss Input Capacitance VDS = –20V, VGS = 0V, f = 1MHz 1790 2380 pF Coss Output Capacitance 260 345 pF Crss Reverse Transfer Capacitance 140 205 pF Rg Gate Resistance f = 1MHz 4 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = –20V, ID = –8.4A VGS = –10V, RGEN = 6Ω 8 16 ns tr Rise Time 15 27 ns td(off) Turn-Off Delay Time 34 55 ns tf Fall Time 14 26 ns Qg(TOT) Total Gate Charge VDD =–20V, ID = –8.4A VGS = –5V 19 27 nC Qgs Gate to Source Gate Charge 5.6 nC Qgd Gate to Drain “Miller” Charge 6.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –8.4A (Note 2) –0.85 –1.2 V trr Reverse Recovery Time IF = –8.4A, di/dt = 100A/µs 30 45 ns Qrr Reverse Recovery Charge 31 47 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V, VGS = 10V. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad. |
Nº de peça semelhante - FDD4685 |
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Descrição semelhante - FDD4685 |
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