TC5117400BST-60 datasheet(4/21 Pages) TOSHIBA

Nome de Peças	TC5117400BST-60

Descrição Electrónicos	4,194,304 WORD X 4 BIT DYNAMIC RAM

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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TC5117400BSJ/BST-60/70

Standard DRAM

DR16040794

4

TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC

.

PRELIMINARY

Recommended DC Operating Conditions (Ta = 0 ~ 70

°C)

*VCC + 2.0V at pulse width ≤ 20ns (pulse width is measured at VCC).

**-2.0V at pulse width

≤ 20ns (pulse width is measured at V

SS).

DC Electrical Characteristics (VCC = 5V ± 10%, Ta = 0 ~ 70°C)

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

NOTE

VCC

Power Supply Voltage

4.5

5.0

5.5

V

2

VIH

Input High Voltage

2.4

-

VCC + 0.5*

V

2

VIL

Input Low Voltage

-0.5**

-

0.8

V

2

SYMBOL

PARAMETER

MIN

MAX

UNIT

NOTE

|CC1

OPERATING CURRENT

Average Power Supply Operating Current

(RAS, CAS, Address Cycling: tRC=tRC MIN)

TC5117400BSJ/BST-60

-

110

mA

3,4

5

TC5117400BSJ/BST-70

-

95

|CC2

STANDBY CURRENT

Power Supply Standby Current

(RAS=CAS=VIH)

–2

mA

|CC3

RAS ONLY REFRESH CURRENT

Average Power Supply Current, RAS Only Mode

(RAS Cycling, CAS=VIH: tRC=tRC MIN.)

TC5117400BSJ/BST-60

-

110

mA

3, 5

TC5117400BSJ/BST-70

-

95

|CC4

FAST PAGE MODE CURRENT

Average Power Supply Current, Fast Page Mode

(RAS =VIL, CAS, Address Cycling: tPC=tPC MIN.)

TC5117400BSJ/BST-60

-

70

mA

3,4

5

TC5117400BSJ/BST-70

-

60

|CC5

STANDBY CURRENT

Power Supply Standby Current

(RAS=CAS=VCC-0.2V)

–1

mA

|CC6

CAS BEFORE RAS REFRESH CURRENT

Average Power Supply Current, CAS Before RAS Mode

(RAS, CAS, Cycling: tRC=tRC MIN.)

TC5117400BSJ/BST-60

-

110

mA

3, 5

TC5117400BSJ/BST70

-

95

|I (L)

INPUT LEAKAGE CURRENT

Input Leakage Current, any input

(0V<VIN<VCC, All Other Pins Not Under Test=0V)

-10

10

µA

|O (L)

OUTPUT LEAKAGE CURRENT

(DOUT is disabled, (0V≤VOUT<VCC)

-10

10

µA

VOH

OUTPUT LEVEL

Output “H” Level Voltage (IOUT=-5mA)

2.4

-

V

VOL

OUTPUT LEVEL

Output “L” Level Voltage (IOUT=4.2mA)

-

0.4

V

Nº de peça semelhante - TC5117400BST-60

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	TC511000J	2Mb / 19P	SILICON GATE CMOS
	TC511000J-10	2Mb / 19P	SILICON GATE CMOS
	TC511000J-12	2Mb / 19P	SILICON GATE CMOS
	TC511000J-85	2Mb / 19P	SILICON GATE CMOS
	TC511000P	2Mb / 19P	SILICON GATE CMOS

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Descrição semelhante - TC5117400BST-60

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Hitachi Semiconductor	HM5116400	273Kb / 33P	4,194,304 - WORD X 4-BIT DYNAMIC RAM
Toshiba Semiconductor	TC5116400BSJ	442Kb / 8P	4,194,304 WORD X 4 BIT DYNAMIC RAM
Toshiba Semiconductor	TC5116400J	1Mb / 25P	4,194,304 WORD X 4 BIT DYNAMIC RAM
Hitachi Semiconductor	HM51W16400	450Kb / 33P	4,194,304-word x 4-bit Dynamic RAM
Toshiba Semiconductor	TC514100AP	635Kb / 21P	4,194,304 WORD x BIT DYNAMIC RAM
	TC514100APL	632Kb / 21P	4,194,304 WORD x BIT DYNAMIC RAM
	TC514101AP	721Kb / 23P	4,194,304 WORD x 1 BIT DYNAMIC RAM
List of Unclassifed Man...	TC514100J-10	647Kb / 24P	4,194,304 WORD X 1 BIT DYNAMIC RAM
Toshiba Semiconductor	TC5141001	647Kb / 24P	4,194,304 WORD x 1 BIT DYNAMIC RAM
OKI electronic componet...	MD56V62400	303Kb / 28P	4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM

More results

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