TC5117400BST-60 datasheet(6/21 Pages) TOSHIBA

Nome de Peças	TC5117400BST-60

Descrição Electrónicos	4,194,304 WORD X 4 BIT DYNAMIC RAM

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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TC5117400BSJ/BST-60/70

Standard DRAM

DR16040794

6

TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC

.

PRELIMINARY

Electrical Characteristics and Recommended AC Operating Conditions (Cont)

SYMBOL

PARAMETER

TC5117400BSJ/BST

UNIT

NOTES

-60

-70

MIN

MAX.

MIN

MAX

tWCH

Write Command Hold Time

10

-

15

-

ns

tWP

Write Command Pulse Width

10

-

15

-

ns

tRWL

Write Command to RAS Lead Time

15

-

20

-

ns

tCWL

Write Command to CAS Lead Time

15

-

20

-

ns

tDS

Data Set-Up Time

0

-

0

-

ns

12

tDH

Data Hold Time

10

-

15

-

ns

12

tREF

Refresh Period

-

32

-

32

ms

tWCS

Write Command Set-Up Time

0

-

0

-

ns

13

tCWD

CAS to WE Delay Time

40

-

45

-

ns

13

tRWD

RAS to WE Delay Time

85

-

95

-

ns

13

tAWD

Column Address to WE Delay Time

55

-

60

-

ns

13

tCPWD

CAS Precharge to WE Delay Time

60

-

65

-

ns

13

tCSR

CAS Set-Up Time

(CAS before RAS Cycle)

5

-5-

ns

tCHR

CAS Hold Time

(CAS before RAS Cycle)

10

-15-

ns

tRPC

RAS to CAS Precharge Time

5

-

5

-

ns

tCPT

CAS Precharge Time

(CAS before RAS Counter Test Cycle

20

-30-

ns

tROH

RAS Hold Time referenced to OE

10

-10-

ns

tOEA

OE Access Time

-

15

-

20

ns

tOED

OE to Data Delay

15

-

15

-

ns

tOEZ

Output buffer turn off Delay Time from OE

0

15015

ns

10

tOEH

OE Command Hold Time

10

-

15

-

ns

tODS

Output Disable Setup Time

0

-

0

-

ns

tWTS

Write Command Set-up Time

(Test Mode In)

10

-10-

ns

tWTH

Write Command Hold Time

(Test Mode In)

10

-10-

ns

tWRP

WE to RAS Precharge Time

(CAS before RAS Cycle)

10

-10-

ns

tWRH

WE to RAS Hold Time

(CAS before RAS Cycle)

10

-10-

ns

Nº de peça semelhante - TC5117400BST-60

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	TC511000J	2Mb / 19P	SILICON GATE CMOS
	TC511000J-10	2Mb / 19P	SILICON GATE CMOS
	TC511000J-12	2Mb / 19P	SILICON GATE CMOS
	TC511000J-85	2Mb / 19P	SILICON GATE CMOS
	TC511000P	2Mb / 19P	SILICON GATE CMOS

More results

Descrição semelhante - TC5117400BST-60

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Hitachi Semiconductor	HM5116400	273Kb / 33P	4,194,304 - WORD X 4-BIT DYNAMIC RAM
Toshiba Semiconductor	TC5116400BSJ	442Kb / 8P	4,194,304 WORD X 4 BIT DYNAMIC RAM
Toshiba Semiconductor	TC5116400J	1Mb / 25P	4,194,304 WORD X 4 BIT DYNAMIC RAM
Hitachi Semiconductor	HM51W16400	450Kb / 33P	4,194,304-word x 4-bit Dynamic RAM
Toshiba Semiconductor	TC514100AP	635Kb / 21P	4,194,304 WORD x BIT DYNAMIC RAM
	TC514100APL	632Kb / 21P	4,194,304 WORD x BIT DYNAMIC RAM
	TC514101AP	721Kb / 23P	4,194,304 WORD x 1 BIT DYNAMIC RAM
List of Unclassifed Man...	TC514100J-10	647Kb / 24P	4,194,304 WORD X 1 BIT DYNAMIC RAM
Toshiba Semiconductor	TC5141001	647Kb / 24P	4,194,304 WORD x 1 BIT DYNAMIC RAM
OKI electronic componet...	MD56V62400	303Kb / 28P	4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM

More results

TC5117400BST-60 Folha de dados(PDF) 6 Page - Toshiba Semiconductor

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