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FP2189-G Folha de dados(PDF) 1 Page - WJ Communication. Inc.

Nome de Peças FP2189-G
Descrição Electrónicos  1 - Watt HFET
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Fabricante Electrônico  WJCI [WJ Communication. Inc.]
Página de início  http://www.wj.com
Logo WJCI - WJ Communication. Inc.

FP2189-G Folha de dados(HTML) 1 Page - WJ Communication. Inc.

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Specifications and information are subject to change without notice.
WJ Communications, Inc
• Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com
September 2004
FP2189
1 - Watt HFET
Product Information
Product Features
50 – 4000 MHz
+30 dBm P1dB
+43 dBm Output IP3
High Drain Efficiency
18.5 dB Gain @ 900 MHz
Lead-free/Green/RoHS-
compliant
SOT-89 Package
MTTF >100 Years
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Product Description
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +43 dBm output IP3
performance and an output power of +30 dBm at 1-dB
compression, while providing 18.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long history
of producing high reliability and quality components. The
FP2189 has an associated MTTF of greater than 100 years
at a mounting temperature of 85
°C and is available in both
the standard SOT-89 package and the environmentally-
friendly lead-free/green/RoHS-compliant and green SOT-
89 package. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
Function
Pin No.
Input / Gate
1
Output / Drain
3
Ground
2, 4
Specifications
DC Parameter
Units Min
Typ
Max
Saturated Drain Current, Idss
(1)
mA
445
615
705
Transconductance, Gm
mS
280
Pinch Off Voltage, Vp
(2)
V
-2.1
RF Parameter
(3)
Units
Min
Typ
Max
Frequency Range
MHz
50 - 4000
Test Frequency
MHz
800
Small Signal Gain
dB
18.5
SS Gain (50
Ω, unmatched)
dB
15
21
Maximum Stable Gain
dB
24
Output P1dB
dBm
+30
Output IP3
(4)
dBm
+43
Noise Figure
dB
4.5
Drain Bias
+8V @ 250 mA
1. Idss is measured with Vgs = 0 V, V ds = 3 V.
2. Pinch-off voltage is measured when Ids = 2.4 mA.
3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 250 mA in an application circuit
with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +125
°C
DC Power
4.0 W
RF Input Power (continuous)
6 dB above Input P1dB
Drain to Gate Voltage, Vdg
+14 V
Junction Temperature
+220
° C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(5)
Parameter
Units
Typical
Frequency
MHz
915
1960
2140
2450
Gain
dB
18.7
15.6
14.4
13.0
Input Return Loss
dB
21
14.6
23
26
Output Return Loss
dB
8.3
12
11.5
9.6
Output P1dB
dBm
+30.2
+30.4
+30.6 +31.2
Output IP3
(4)
dBm
+42.8
+43.5
+43.9 +45.3
Noise Figure
dB
4.5
3.4
4.5
IS-95 Channel Power
@ -45 dBc ACPR
dBm
+24.5
+23.8
W-CDMA Ch. Power
@ -45 dBc ACLR
+22.2
Drain Voltage
V
+8
Drain Current
mA
250
5. Typical parameters represent performance in a tuned application circuit.
Ordering Information
Part No.
Description
FP2189
1 -Watt HFET
(leaded SOT-89 Pkg)
FP2189-G
1 -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 Pkg)
FP2189-PCB900S
870 – 960 MHz Application Circuit
FP2189-PCB1900S
1930 – 1990 MHz Application Circuit
FP2189-PCB2140S
2110 – 2170 MHz Application Circuit
RF IN
GND
RF OUT
GND
1
2
3
4


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