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CS5421GD16 Folha de dados(PDF) 3 Page - ON Semiconductor

Nome de Peças CS5421GD16
Descrição Electrónicos  Dual Out?뭥f?뭁hase Synchronous Buck Controller with Remote Sense
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CS5421GD16 Folha de dados(HTML) 3 Page - ON Semiconductor

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CS5421
http://onsemi.com
3
ABSOLUTE MAXIMUM RATINGS (continued)
Pin Symbol
ISINK
ISOURCE
VMIN
VMAX
Pin Name
ROSC
Oscillator Resistor
4.0 V
−0.3 V
1.0 mA
1.0 mA
GATE(H)1, GATE(H)2
High−Side FET Driver
for Channel 1 or 2
16 V
−0.3 V
1.5 A peak
200 mA DC
1.5 A peak
200 mA DC
GATE(L)1, GATE(L)2
Low−Side FET Driver for
Channel 1 or 2
16 V
−0.3 V
1.5 A peak
200 mA DC
1.5 A peak
200 mA DC
PGND1
Power Ground for Channel 1
0 V
0 V
1.5 A peak
200 mA DC
N/A
PGND2
Power Ground for Channel 2
0 V
0 V
1.5 A peak
200 mA DC
N/A
SGND
Ground for Internal Reference
150 mV
0 V
1.0 mA
N/A
LGND
Logic Ground
0 V
0 V
50 mA
N/A
ELECTRICAL CHARACTERISTICS (0°C < TA < 70°C; 0°C < TJ < 125°C; ROSC = 30.9 k, CCOMP1,2 = 0.1 μF,
10.8 V < VCC < 13.2 V; CGATE(H)1,2 = CGATE(L)1,2 = 1.0 nF, unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
Error Amplifier
VFB1(2) Bias Current
VFB1(2) = 0 V
0.1
1.0
μA
COMP1,2 Source Current
COMP1,2 = 1.2 V to 2.5 V; VFB1(2) = 0.8 V
15
30
60
μA
COMP1,2 Sink Current
COMP1,2 = 1.2 V; VFB1(2) = 1.2 V
15
30
60
μA
Reference Voltage 1
COMP1 = VFB1; 25°C < TJ < 125°C
0.992
1.000
1.008
V
Reference Voltage 2
COMP2 = VFB2
0.980
1.000
1.020
V
COMP1,2 Max Voltage
VFB1(2) = 0.8 V
3.0
3.3
V
COMP1,2 Min Voltage
VFB1(2) = 1.2 V
0.25
0.35
V
Open Loop Gain
95
dB
Unity Gain Band Width
40
kHz
PSRR @ 1.0 kHz
70
dB
Transconductance
32
mmho
Output Impedance
2.5
GATE(H) and GATE(L)
High Voltage (AC)
Measure: VCC − GATE(L)1,2;
VCC − GATE(H)1,2; Note 2
0
0.5
V
Low Voltage (AC)
Measure:GATE(L)1,2 or GATE(H)1,2; Note 2
0
0.5
V
Rise Time
1.5 V < GATE(L)1,2 < VCC − 1.5 V
1.5 V < GATE(H)1,2 < VCC − 1.5 V
25
60
ns
Fall Time
VCC − 1.5 > GATE(L)1,2 > 1.5 V
VCC − 1.5 > GATE(H)1,2 > 1.5 V
20
60
ns
GATE(H) to GATE(L) Delay
GATE(H)1,2 < 1.0 V, GATE(L)1,2 > 1.0 V
40
70
100
ns
GATE(L) to GATE(H) Delay
GATE(L)1,2 < 1.0 V, GATE(H)1,2 > 1.0 V
40
70
100
ns
GATE(H)1(2) and GATE(L)1(2)
pull−down
Resistance to PGND
Note 2
50
125
280
2. Guaranteed by design, not 100% tested in production.


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