NUS5530MN datasheet(2/9 Pages) ONSEMI

Nome de Peças	NUS5530MN

Descrição Electrónicos	Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

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NUS5530MN

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MAXIMUM RATINGS FOR PNP TRANSISTORS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

−35

Vdc

Collector-Base Voltage

VCBO

−55

Vdc

Emitter-Base Voltage

VEBO

−5.0

Vdc

Collector Current − Continuous

IC

−2.0

Adc

Collector Current − Peak

ICM

−7.0

A

Electrostatic Discharge

ESD

HBM Class 3

MM Class C

THERMAL CHARACTERISTICS FOR P−CHANNEL FET

Characteristic

Symbol

Typ

Max

Unit

Maximum Junction−to−Ambient (Note 4)

t v 5 sec

Steady State

RqJA

40

80

50

95

°C/W

Maximum Junction−to−Foot (Drain)

Steady State

RqJF

15

20

°C/W

THERMAL CHARACTERISTICS FOR PNP TRANSISTORS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD (Note 1)

635

5.1

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

RqJA (Note 1)

200

°C/W

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD (Note 2)

1.35

11

W

mW/°C

Thermal Resistance, Junction−to−Ambient

RqJA (Note 2)

90

°C/W

Thermal Resistance, Junction−to−Lead #1

RqJL

15

°C/W

Total Device Dissipation (Single Pulse < 10 sec)

PDsingle

(Notes 2 & 3)

2.75

W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

1. FR−4 @ 100 mm2, 1 oz copper traces.

2. FR−4 @ 500 mm2, 1 oz copper traces.

3. Thermal response.

Nº de peça semelhante - NUS5530MN

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ON Semiconductor	NUS5531MT	150Kb / 10P	Main Switch Power MOSFET and Single Charging BJT July, 2008 ??Rev. 1
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