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BC807DS Folha de dados(PDF) 4 Page - NXP Semiconductors

Nome de Peças BC807DS
Descrição Electrónicos  PNP general purpose double transistor
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC807DS Folha de dados(HTML) 4 Page - NXP Semiconductors

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2002 Nov 22
4
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC807DS
handbook, halfpage
0
400
600
200
300
500
100
MHC324
−10−1
−1
−10
hFE
−102
IC (mA)
−103
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
VCE =1V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0
−10
VCE (V)
−1000
0
−200
−400
−600
−800
−2
IC
(mA)
−4
−6
−8
MHC325
(10)
(6)
(5)
(4)
(1)
(2)
(3)
(9)
(8)
(7)
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = −7 mA.
(2) IB = −6.3 mA.
(3) IB = −5.6 mA.
(4) IB = −4.9 mA.
(5) IB = −4.2 mA.
(6) IB = −3.5 mA.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
handbook, halfpage
−103
−102
−10
−1
MHC326
−10−1
−1
−10
VCEsat
(mV)
−102
IC (mA)
−103
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
−200
−1200
−400
−600
−800
−1000
MHC327
−10−1
−1
−10
VBE
(mV)
−102
IC (mA)
−103
(3)
(2)
(1)
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
VCE =1V.
(1) Tamb = −55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.


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