MC100EL34D datasheet(4/8 Pages) ONSEMI

Nome de Peças	MC100EL34D

Descrição Electrónicos	5V ECL 첨2, 첨4, 첨8 Clock Generation Chip

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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MC10EL34, MC100EL34

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100EL SERIES PECL DC CHARACTERISTICS VCC= 5.0 V; VEE= 0.0 V (Note 1.)

–40

°C

25

°C

85

°C

Symbol

Characteristic

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

IEE

Power Supply Current

39

42

mA

VOH

Output HIGH Voltage (Note 2.)

3915

3995

4120

3975

4045

4120

3975

4050

4120

mV

VOL

Output LOW Voltage (Note 2.)

3170

3305

3445

3190

3295

3380

3190

3295

3380

mV

VIH

Input HIGH Voltage (Single Ended)

3835

4120

3835

4120

3835

4120

mV

VIL

Input LOW Voltage (Single Ended)

3190

3525

3190

3525

3190

3525

mV

VBB

Output Voltage Reference

3.62

3.74

3.62

3.74

3.62

3.74

V

VIHCMR

Input HIGH Voltage Common Mode

Range (Differential) (Note 3.)

2.2

4.6

2.2

4.6

2.2

4.6

V

IIH

Input HIGH Current

150

µA

IIL

Input LOW Current

0.5

µA

NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The

circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / –0.5 V.

2. Outputs are terminated through a 50 ohm resistor to VCC–2 volts.

3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input

signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1V.

100EL SERIES NECL DC CHARACTERISTICS VCC= 0.0 V; VEE= –5.0 V (Note 1.)

–40

°C

25

°C

85

°C

Symbol

Characteristic

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

IEE

Power Supply Current

39

42

mA

VOH

Output HIGH Voltage (Note 2.)

–1085

–1005

–880

–1025

–955

–880

–1025

–955

–880

mV

VOL

Output LOW Voltage (Note 2.)

–1830

–1695

–1555

–1810

–1705

–1620

–1810

–1705

–1620

mV

VIH

Input HIGH Voltage (Single Ended)

–1165

–880

–1165

–880

–1165

–880

mV

VIL

Input LOW Voltage (Single Ended)

–1810

–1475

–1810

–1475

–1810

–1475

mV

VBB

Output Voltage Reference

–1.38

–1.26

–1.38

–1.26

–1.38

–1.26

V

VIHCMR

Input HIGH Voltage Common Mode

Range (Differential) (Note 3.)

–2.8

–0.4

–2.8

–0.4

–2.8

–0.4

V

IIH

Input HIGH Current

150

µA

IIL

Input LOW Current

0.5

µA

NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The

circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / –0.5 V.

2. Outputs are terminated through a 50 ohm resistor to VCC–2 volts.

3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input

signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1V.

Nº de peça semelhante - MC100EL34D

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	MC100EL34D	94Kb / 3P	첨2,첨4,첨8 Clock Generation Chip 1996 REV 2
	MC100EL34D	133Kb / 8P	5V ECL 첨2, 첨4, 첨8 Clock Generation Chip November, 2006 ??Rev. 10
	MC100EL34DG	133Kb / 8P	5V ECL 첨2, 첨4, 첨8 Clock Generation Chip November, 2006 ??Rev. 10
	MC100EL34DG	173Kb / 9P	Clock Generation Chip July, 2016 ??Rev. 11
	MC100EL34DR2	94Kb / 3P	첨2,첨4,첨8 Clock Generation Chip 1996 REV 2

More results

Descrição semelhante - MC100EL34D

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	MC10EL34	133Kb / 8P	5V ECL 첨2, 첨4, 첨8 Clock Generation Chip November, 2006 ??Rev. 10
	MC100LVEL34	145Kb / 10P	3.3V ECL 첨2, 첨4, 첨8 Clock Generation Chip November, 2006 ??Rev. 2
	MC100LVEL34	145Kb / 10P	3.3V ECL 첨2, 첨4, 첨8 Clock Generation Chip November, 2006 ??Rev. 2
Micrel Semiconductor	SY10EL34	57Kb / 4P	5V/3.3V 첨2, 첨4, 첨8 CLOCK GENERATION CHIP
Microchip Technology	SY100EL34	752Kb / 14P	5V/3.3V 첨2, 첨4, 첨8 Clock Generation Chip 02/28/20
Micrel Semiconductor	SY10EL34	61Kb / 5P	5V/3.3V 첨2, 첨4, 첨8 CLOCK GENERATION CHIP
Micrel Semiconductor	SY10EL34	176Kb / 7P	5V/3.3V 첨2, 첨4, 첨8 Clock Generation Chip
ON Semiconductor	MC10EL34	94Kb / 3P	첨2,첨4,첨8 Clock Generation Chip 1996 REV 2
	MC100LVEP34	150Kb / 12P	2.5V / 3.3V ECL 첨2, 첨4, 첨8 Clock Generation Chip November, 2006 ??Rev. 9
	MC100EL38	122Kb / 7P	5V ECL 첨2, 첨4/6 Clock Generation Chip October, 2006 ??Rev. 7

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