KM641003A-15 datasheet(6/8 Pages) SAMSUNG

Nome de Peças	KM641003A-15

Descrição Electrónicos	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range

Download	8 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SAMSUNG [Samsung semiconductor]

Página de início	http://www.samsung.com/Products/Semiconductor

Logo

6 / 8 page

KM641003A

CMOS SRAM

PRELIMINARY

Rev 4.0

- 6 -

February 1998

NOTES(READ CYCLE)

1. WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or

VOL levels.

4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to

device.

5. Transition is measured

±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.

6. Device is continuously selected with CS=VIL.

7. Address valid prior to coincident with CS transition low.

8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write

cycle.

TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)

Address

CS

tWP(2)

tDW

tDH

Valid Data

WE

Data in

Data out

tWC

tWR(5)

tAW

tCW(3)

High-Z(8)

High-Z

OE

tOHZ(6)

tAS(4)

TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)

Address

CS

tWP1(2)

tDW

tDH

tOW

tWHZ(6)

Valid Data

WE

Data in

Data out

tWC

tAS(4)

tWR(5)

tAW

tCW(3)

(10)

(9)

High-Z(8)

High-Z

Nº de peça semelhante - KM641003A-15

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	KM641003B	130Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
	KM641003B-10	130Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
	KM641003B-12	130Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
	KM641003B-8	130Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
	KM641003C	127Kb / 8P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating)

More results

Descrição semelhante - KM641003A-15

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	KM681002B	171Kb / 8P	128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
	KM684002	149Kb / 9P	512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range.
	K6R1004C1A	127Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
	KM681002A	171Kb / 9P	128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
	K6R1008V1B	184Kb / 9P	128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
	K6R1008C1A-	168Kb / 8P	128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
	KM641001A	127Kb / 8P	256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range
	KM68257C	190Kb / 10P	32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range.
	K6R1008C1B-	169Kb / 8P	128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
	K6R1004C1B	128Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

More results

KM641003A-15 Folha de dados(PDF) 6 Page - Samsung semiconductor

KM641003A-15 Folha de dados(HTML) 6 Page - Samsung semiconductor

Nº de peça semelhante - KM641003A-15

Descrição semelhante - KM641003A-15

Html Pages

1 2 3 4 5 6 7 8

Folha de dados Download

Ligação URL