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IRF7905PBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRF7905PBF Folha de dados(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 07/10/06 IRF7905PbF HEXFET® Power MOSFET SO-8 Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.8 8.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 6.2 7.1 A IDM Pulsed Drain Current c 62 71 PD @TA = 25°C Power Dissipation 2.0 2.0 W PD @TA = 70°C Power Dissipation 1.3 1.3 Linear Derating Factor 0.016 0.016 W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Q1 Max. Q2 Max. Units RθJL Junction-to-Drain Lead g 20 20 °C/W RθJA Junction-to-Ambient fg 62.5 62.5 ± 20 30 -55 to + 150 VDSS ID 30V Q1 21.8m :@V GS = 10V 7.8A Q2 17.1m :@V GS = 10V 8.9A RDS(on) max PD - 97065A |
Nº de peça semelhante - IRF7905PBF |
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Descrição semelhante - IRF7905PBF |
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