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BU1706A Folha de dados(PDF) 3 Page - NXP Semiconductors |
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BU1706A Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A Fig.3. Test circuit resistive load. V IM = -6 to +8 V V CC = 250 V; tp = 20 µs; δ = tp / T = 0.01. R B and RL calculated from ICon and IBon requirements. Fig.4. Switching times waveforms with resistive load. Fig.5. Test circuit inductive load. V CC = 300 V; -VBE = 5 V; LB = 1 uH Fig.6. Test Circuit RBSOA. V CC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V; L B = 1 µH Fig.7. Switching times waveforms with inductive load. Fig.8. Normalised power dissipation. PD% = 100 ⋅PD/PD 25 ˚C = f (Tmb) tp T VCC R R T.U.T. 0 VIM B L LB IBend -VBB LC T.U.T. VCC VCL CFB IC IB 10 % 10 % 90 % 90 % ton toff ts tf IBon -IBoff ICon tr 30ns IC IB ICon IBon -IBoff t t ts tf toff 10 % 90 % LB IBon -VBB LC T.U.T. VCC 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 September 1997 3 Rev 1.000 |
Nº de peça semelhante - BU1706A |
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Descrição semelhante - BU1706A |
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