BU1706A datasheet(3/7 Pages) PHILIPS

Nome de Peças	BU1706A

Descrição Electrónicos	Silicon Diffused Power Transistor

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Fabricante Electrônico	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1706A

Fig.3. Test circuit resistive load. V

IM = -6 to +8 V

V

CC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

R

B and RL calculated from ICon and IBon requirements.

Fig.4. Switching times waveforms with resistive load.

Fig.5. Test circuit inductive load.

V

CC = 300 V; -VBE = 5 V; LB = 1 uH

Fig.6. Test Circuit RBSOA.

V

CC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V;

L

B = 1 µH

Fig.7. Switching times waveforms with inductive load.

Fig.8. Normalised power dissipation.

PD% = 100

⋅PD/PD

25 ˚C = f (Tmb)

tp

T

VCC

R

T.U.T.

0

VIM

B

L

LB

IBend

-VBB

LC

T.U.T.

VCC

VCL

CFB

IC

IB

10 %

90 %

ton

toff

ts

tf

IBon

-IBoff

ICon

tr

30ns

IC

IB

ICon

IBon

-IBoff

t

ts

tf

toff

10 %

90 %

LB

IBon

-VBB

LC

T.U.T.

VCC

0

20

40

60

80

100

120

140

Tmb / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

September 1997

3

Rev 1.000

Nº de peça semelhante - BU1706A

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Inchange Semiconductor ...	BU1706A	249Kb / 2P	isc Silicon NPN Power Transistor
NXP Semiconductors	BU1706AB	83Kb / 7P	Silicon Diffused Power Transistor February 1998 Rev 1.000
NXP Semiconductors	BU1706AX	78Kb / 7P	Silicon Diffused Power Transistor April 1994 Rev 1.000
Inchange Semiconductor ...	BU1706AX	98Kb / 2P	isc Silicon NPN Power Transistor
Savantic, Inc.	BU1706AX	204Kb / 3P	Silicon NPN Power Transistors

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