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BU2522AW Folha de dados(PDF) 1 Page - NXP Semiconductors

Nome de Peças BU2522AW
Descrição Electrónicos  Silicon Diffused Power Transistor
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2522AW Folha de dados(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
P
tot
Total power dissipation
T
mb ≤ 25 ˚C
-
125
W
V
CEsat
Collector-emitter saturation voltage
I
C = 6.0 A; IB = 1.2 A
-
5.0
V
I
Csat
Collector saturation current
f = 64 kHz
6.0
-
A
t
f
Fall time
I
Csat = 6.0 A; f = 64 kHz
0.12
0.25
µs
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
I
B
Base current (DC)
-
6
A
I
BM
Base current peak value
-
9
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
150
mA
-I
BM
Reverse base current peak value
1
-6
A
P
tot
Total power dissipation
T
mb
25 ˚C
-
125
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
with heatsink compound
-
1.0
K/W
R
th j-a
Junction to ambient
in free air
45
-
K/W
2
3
1
b
c
e
1 Turn-off current.
September 1997
1
Rev 1.100


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