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KA1M0280R Folha de dados(PDF) 3 Page - Fairchild Semiconductor |
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KA1M0280R Folha de dados(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page SPS KA1M0280R 3 NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% ELECTRICAL CHARACTERISTICS (SFET part) (Ta=25 °C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 8000 − − V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V − − 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C − − 200 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=1.0A − 5.6 7.0 Ω Forward transconductance (note) gfs VDS=50V, ID=1.0A 1.5 2.5 − mho Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz − 250 − pF Output capacitance Coss − 52 − Reverse transfer capacitance Crss − 25 − Turn on delay time td(on) VDD=0.5BVDSS, ID=2.0A (MOSFET switching time are essentially independent of operating temperature) − 21 − nS Rise time tr − 28 − Turn off delay time td(off) − 77 − Fall time tf − 24 − Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=2.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) − − 60 nC Gate-source charge Qgs − 15 − Gate-drain (Miller) charge Qgd − 20 − |
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