TPIC5423L

4-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL

POWER DMOS ARRAY

SLIS045 – NOVEMBER 1994

2–3

POST OFFICE BOX 655303

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSX Drain-to-source breakdown voltage

ID = 250 µA,

VGS = 0

60

V

VGS(th)

Gate-to-source threshold voltage

ID = 1 mA,

See Figure 5

VDS = VGS,

1.5

1.75

2.2

V

V(BR)GS

Gate-to-source breakdown voltage

IGS = 250 µA

18

V

V(BR)SG

Source-to-gate breakdown voltage

ISG = 250 µA

9

V

V(BR)

Reverse drain-to-GND breakdown voltage

Drain-to-GND current = 250

µA

100

V

VDS(on)

Drain-to-source on-state voltage

ID = 1.25 A,

See Notes 2 and 3

VGS = 5 V,

0.4

0.47

V

VF(SD)

Forward on-state voltage, source-to-drain

IS = 1.25 A,

VGS = 0 (Z1, Z2, Z3, Z4),

See Notes 2 and 3 and Figure 12

0.9

1.1

V

VF

Forward on-state voltage, GND-to-drain

ID = 1.25 A (D1, D2, D3, D4),

See Notes 2 and 3

2

V

IDSS

Zero gate voltage drain current

VDS = 48 V,

TC = 25°C

0.05

1

µA

IDSS

Zero-gate-voltage drain current

DS

,

VGS = 0

TC = 125°C

0.5

10

µA

IGSSF

Forward-gate current, drain short circuited to source

VGS = 15 V,

VDS = 0

20

200

nA

IGSSR

Reverse-gate current, drain short circuited to source

VSG = 5 V,

VDS = 0

10

100

nA

Ilk

Leakage current drain to GND

VDGND =48V

TC = 25°C

0.05

1

µA

Ilkg

Leakage current, drain-to-GND

VDGND = 48 V

TC = 125°C

0.5

10

µA

rDS( )

Static drain to source on state resistance

VGS = 5 V,

ID = 1.25 A,

TC = 25°C

0.32

0.375

Ω

rDS(on)

Static drain-to-source on-state resistance

D

,

See Notes 2 and 3

and Figures 6 and 7

TC = 125°C

0.44

0.55

Ω

gfs

Forward transconductance

VDS = 15 V,

ID = 0.625 A,

See Notes 2 and 3 and Figure 9

1.25

1.63

S

Ciss

Short-circuit input capacitance, common source

200

250

Coss

Short-circuit output capacitance, common source

VDS = 25 V,

VGS = 0,

100

125

pF

Crss

Short-circuit reverse-transfer capacitance,

common source

f = 1 MHz,

See Figure 11

60

75

F

NOTES:

2. Technique should limit TJ – TC to 10°C maximum.

3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

t

Reverse recovery time

Z1, Z2, Z3, and Z4

80

ns

trr

Reverse-recovery time

IS = 0.625 A,

VDS = 48 V,

VGS 0

di/dt

100 A/

µs

D1, D2, D3, and D4

130

ns

QRR

Total diode charge

VGS = 0,

di/dt = 100 A/

µs,

See Figures 1 and 14

Z1, Z2, Z3, and Z4

0.8

µC

QRR

Total diode charge

See Figures 1 and 14

D1, D2, D3, and D4

0.66

µC