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IRL5NJ7413 Folha de dados(PDF) 1 Page - International Rectifier |
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IRL5NJ7413 Folha de dados(HTML) 1 Page - International Rectifier |
1 / 7 page Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 22* ID @ VGS = 10V, TC = 100°C Continuous Drain Current 22* IDM Pulsed Drain Current À 88 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.60 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy Á 190 mJ IAR Avalanche Current À 22 A EAR Repetitive Avalanche Energy À 7.5 mJ dv/dt Peak Diode Recovery dv/dt  1.0 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temperature 300 (for 5 s) Weight 1.0 g Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. oC A 08/23/04 www.irf.com 1 30V, N-CHANNEL SMD-0.5 Product Summary Part Number BVDSS RDS(on) ID IRL5NJ7413 30V 0.014 Ω 22A* Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight For footnotes refer to the last page * Current is limited by package HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) IRL5NJ7413 PD - 94271B |
Nº de peça semelhante - IRL5NJ7413 |
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Descrição semelhante - IRL5NJ7413 |
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