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BU4525AF Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BU4525AF
Descrição Electrónicos  Silicon Diffused Power Transistor
Download  6 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU4525AF Folha de dados(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
EB = 6.0 V; IC = 0 A
-
-
100
µA
BV
EBO
Emitter-base breakdown voltage
I
B = 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
800
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 9.0 A;IB = 2.25A
-
-
3.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 9.0 A;IB = 2.25A
0.88
0.97
1.06
V
h
FE
DC current gain
I
C = 1.0 A; VCE = 5 V
-
12
-
h
FE
I
C = 9.0 A; VCE = 5 V
4.2
5.8
7.6
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (16 kHz line
I
Csat = 9.0 A;IB1 = 1.8 A
deflection circuit)
(I
B2 = -4.5 A)
t
s
Turn-off storage time
3.7
4.5
µs
t
f
Turn-off fall time
0.4
0.55
µs
Switching times (70 kHz line
I
Csat = 7.0 A;IB1 = 1.4 A
deflection circuit)
(I
B2 = -4.5 A)
t
s
Turn-off storage time
2
-
µs
t
f
Turn-off fall time
0.15
-
µs
2 Measured with half sine-wave voltage (curve tracer).
October 1998
2
Rev 1.100


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