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STU95N4F3 Folha de dados(PDF) 4 Page - STMicroelectronics |
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STU95N4F3 Folha de dados(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STD95N4F3 - STP95N4F3 - STU95N4F3 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 40 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 24 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 40A 5.4 6.5 m Ω Table 4. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =25V, ID=40A 100 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 2200 580 40 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=20V, ID = 80A VGS =10V (see Figure 13) 40 11 8 54 nC nC nC |
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