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STB36NF06L Folha de dados(PDF) 4 Page - STMicroelectronics |
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STB36NF06L Folha de dados(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STP36NF06L - STB36NF06L 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test condictions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID=250µA, VGS=0 60 V IDSS Zero gate voltage drain current (VGS=0) VDS=Max rating VDS=Max rating Tc=125°C 1 10 µA µA IGSS Gate-body leakage current (VDS=0) VGS=±18V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 12.5 V RDS(on) Static drain-source on resistance VGS=10V, ID=15A VGS=5V, ID=15A 0.032 0.045 0.04 0.05 Ω Ω Table 4. Dynamic Symbol Parameter Test condictions Min Typ Max Unit gfs Forward transconductance VDS=15V, ID=15A 15 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS=25V, f=1MHz,VGS=0 660 170 70 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=30V, ID=30A VGS=5V 13 4.2 7.8 17 nC nC nC |
Nº de peça semelhante - STB36NF06L |
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Descrição semelhante - STB36NF06L |
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