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STB190NF04-1 Folha de dados(PDF) 5 Page - STMicroelectronics

Nome de Peças STB190NF04-1
Descrição Electrónicos  N-channel 40V - 0.0039ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB190NF04-1 Folha de dados(HTML) 5 Page - STMicroelectronics

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STP190NF04 - STB190NF04 - STB190NF04-1
Electrical characteristics
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Table 5.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
120
480
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 120A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 190A,
di/dt = 100A/µs,
VDD = 34V, Tj = 150°C
(see Figure 17)
90
295
6.5
ns
nC
A


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