STC12IE90HV datasheet(3/11 Pages) STMICROELECTRONICS

Nome de Peças	STC12IE90HV

Descrição Electrónicos	Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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STC12IE90HV

Electrical ratings

3/11

1

Electrical ratings

Table 2.

Thermal data

Table 1.

Absolute maximum rating

Symbol

Parameter

Value

Unit

VCS(SS) Collector-source voltage (VBS = VGS = 0 V)

900

V

VBS(OS) Base-source voltage (IC = 0, VGS = 0 V)

30

V

VSB(OS) Source-base voltage (IC = 0, VGS = 0 V)

17

V

VGS

Gate-source voltage

± 17

V

IC

Collector current

12

A

ICM

Collector peak current (tP < 5ms)

36

A

IB

Base current

6

A

IBM

Base peak current (tP < 5ms)

10

A

Ptot

Total dissipation at Tc = 25°C

208

W

Tstg

Storage temperature

-40 to 150

°C

TJ

Max. operating junction temperature

150

°C

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case

__max

0.6

°C/W

Nº de peça semelhante - STC12IE90HV

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Descrição semelhante - STC12IE90HV

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STP12IE90F4	274Kb / 11P	Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm
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	STC08IE120HP	295Kb / 11P	Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
	STC08IE150HV	120Kb / 7P	Emitter Switched Bipolar Transistor ESBT 1500 V - 8A - 0.10 ohm
	STC05IE150HV	118Kb / 7P	Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm November 2006 Rev 2
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	STC08DE150	264Kb / 9P	HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM

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