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IRF513 Folha de dados(PDF) 5 Page - Harris Corporation

Nome de Peças IRF513
Descrição Electrónicos  4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
Download  7 Pages
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Fabricante Electrônico  HARRIS [Harris Corporation]
Página de início  http://www.harris.com
Logo HARRIS - Harris Corporation

IRF513 Folha de dados(HTML) 5 Page - Harris Corporation

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5-5
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves Unless Otherwise Specified (Continued)
VDS, DRAIN TO SOURCE VOLTAGE (V)
24
6
8
010
10
8
6
0
4
VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4V
80
µs PULSE TEST
2
VDS ≥ 50V
80
µs PULSE TEST
TJ = 175
oC
TJ = 25
oC
VGS, GATE TO SOURCE VOLTAGE (V)
10
1
0.1
10-2
0
246
8
10
ID, DRAIN CURRENT (A)
4
8
12
16
020
5.0
4.0
3.0
0
2.0
VGS = 20V
80
µs PULSE TEST
1.0
VGS = 10V
3.0
1.8
0.6
0
60
160 180
-60
TJ, JUNCTION TEMPERATURE (
oC)
ID = 3.4A
2.4
1.2
0
-40
-20
20
40
80
100
140
120
VGS = 10V
1.25
1.05
0.85
0
60
160 180
-60
TJ, JUNCTION TEMPERATURE (
oC)
ID = 250µA
1.15
0.95
0.75
-40
-20
20
40
80
100
140
120
VDS, DRAIN TO SOURCE VOLTAGE (V)
500
400
300
200
100
0
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
CISS
COSS
CRSS
1
2
5
10
2
5
102
IRF510, IRF511, IRF512, IRF513


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