MJ11015 MJ11012 MJ11016

http://onsemi.com

3

30 k

0.3

Figure 2. DC Current Gain (1)

0.5 0.7 1

2

3

10

20

30

7 k

3 k

2 k

700

Figure 3. Small–Signal Current Gain

2

10

f, FREQUENCY (kHz)

20

30

50

70

200 300

500

1.0 k

0.2

0.05

0.02

0.01

10 k

5 k

500

300

5

7

100

5

0.1

Figure 4. “On” Voltages (1)

100

0

Figure 5. Active Region DC Safe Operating Area

20 k

PNP MJ11015

NPN MJ11012, MJ11016

4

3

2

1

50

35

10

20

200

10

5

0.01

20

2

1

0.2

0.1

0.5

0.05

0.02

50

0.1

0.5

1

0.005

700

MJ11012

MJ11015, MJ11016

27

30

70 100

220

50

0.2

0.5

1

10

5

PNP MJ11015

NPN MJ11012, MJ11016

PNP MJ11015

NPN MJ11012, MJ11016

BONDING WIRE LIMITATION

SECOND BREAKDOWN LIMITATION

There are two limitations on the power handling ability of

a transistor average junction temperature and secondary

limits of the transistor that must be observed for reliable

operations e.g., the transistor must not be subjected to

greater dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by secondary breakdown.