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MJE5740 Folha de dados(PDF) 5 Page - ON Semiconductor

Nome de Peças MJE5740
Descrição Electrónicos  NPN Silicon Power Darlington Transistors 8 AMPERES 300??00 VOLTS 80 WATTS
Download  6 Pages
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE5740 Folha de dados(HTML) 5 Page - ON Semiconductor

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MJE5740, MJE5742
http://onsemi.com
5
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
16
14
12
8
0
2
4
10
100
200
300
500
0
400
16
5
10
8
1
0.02
100
0.1
10
20
200
400
3
0.5
50
0.3
0.05
dc
1ms
100 ms
MJE5742
MJE5740
VBE(off) ≤ 5 V
TJ = 100°C
6
CURVES APPLY BELOW RATED VCEO
10 ms
MJE5742
MJE5740
5ms
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7
1
2
10
7
5
2
1
0.7
0.2
0.3
5
0.5
10
3
3
0.3
0.2
7
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7 1
2
10
0.7
0.5
0.2
0.1
0.07
0.02
0.3
Figure 8. Turn−On Time
5
0.05
1
Figure 9. Turn−Off Time
3
VCC = 250 V
IB1 = IB2
IC/IB = 20
ts
tr
tf
td
VCC = 250 V
IB1 = IB2
IC/IB = 20
0.3
0.03
0.2
7
RESISTIVE SWITCHING PERFORMANCE


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