MJE800 datasheet(2/6 Pages) ONSEMI

Nome de Peças	MJE800

Descrição Electrónicos	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

MJE700, MJE800

(IC = 50 mAdc, IB = 0)

MJE702, MJE703, MJE802, MJE803

V(BR)CEO

60

80

−

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

MJE700, MJE800

(VCE = 80 Vdc, IB = 0)

MJE702, MJE703, MJE802, MJE803

ICEO

−

100

mAdc

Collector Cutoff Current

(VCB = Rated BVCEO, IE = 0)

(VCB = Rated BVCEO, IE = 0, TC = 100_C)

ICBO

−

100

500

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

2.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

MJE700, MJE702, MJE800, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc)

MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc)

All devices

hFE

750

100

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 1.5 Adc, IB = 30 mAdc)

MJE700, MJE702, MJE800, MJE802

(IC = 2.0 Adc, IB = 40 mAdc)

MJE703, MJE803

(IC = 4.0 Adc, IB = 40 mAdc)

All devices

VCE(sat)

−

2.5

2.8

3.0

Vdc

Base−Emitter On Voltage (Note 1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

MJE700, MJE702, MJE800, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc)

MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc)

All devices

VBE(on)

−

2.5

3.0

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

hfe

1.0

−

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

25

TC, CASE TEMPERATURE (°C)

0

50

125

150

30

TO−220AB

50

40

20

10

Figure 1. Power Derating

75

100

TO−126

Nº de peça semelhante - MJE800

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	MJE800	256Kb / 6P	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
ON Semiconductor	MJE800	256Kb / 6P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY 1995 REV 3
Fairchild Semiconductor	MJE800	51Kb / 4P	Monolithic Construction With Built-in Base- Emitter Resistors
Savantic, Inc.	MJE800	103Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	MJE800	130Kb / 3P	Silicon NPN Power Transistors

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Descrição semelhante - MJE800

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	MJE700	256Kb / 6P	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
	TIP100	218Kb / 6P	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
	TIP120	251Kb / 6P	DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
List of Unclassifed Man...	MJ2501	485Kb / 4P	10 Ampere Darlington Power Transistors Complementary Silicon
Motorola, Inc	TIP140	234Kb / 6P	10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
	TIP110	269Kb / 6P	DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
	D45C	94Kb / 4P	4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS
	MJ11028	153Kb / 4P	50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
ON Semiconductor	MJH11017	86Kb / 6P	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150??50 VOLTS, 150 WATTS July, 2006 ??Rev. 6
ON Semiconductor	MPSW45	228Kb / 6P	One Watt Darlington Transistors(NPN Silicon) 1996

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