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MMBD717LT1G Folha de dados(PDF) 2 Page - ON Semiconductor |
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MMBD717LT1G Folha de dados(HTML) 2 Page - ON Semiconductor |
2 / 3 page MMBD717LT1 http://onsemi.com 2 25°C 125°C 85°C TA = 150°C NOTES: 1. A 2.0 k W variable resistor adjusted for a Forward Current (IF) of 10 mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. tp » trr +10 V 2 k 820 W 0.1 mF DUT VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit 0 0.05 VF, FORWARD VOLTAGE (VOLTS) 0.1 10 1.0 0.1 85°C 10 0 VR, REVERSE VOLTAGE (VOLTS) 1.0 0.1 0.01 0.001 1.0 0 VR, REVERSE VOLTAGE (VOLTS) 0.5 0 2.0 4.0 Figure 2. Typical Forward Voltage Figure 3. Reverse Current versus Reverse Voltage Figure 4. Typical Capacitance −40 °C 25°C −55 °C 150 °C 125 °C 100 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 1.0 1.5 2.0 2.5 3.0 6.0 8.0 10 12 14 16 18 |
Nº de peça semelhante - MMBD717LT1G |
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Descrição semelhante - MMBD717LT1G |
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