MMBD717LT1G datasheet(2/3 Pages) ONSEMI

Nome de Peças	MMBD717LT1G

Descrição Electrónicos	20 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES

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MMBD717LT1

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2

25°C

125°C

85°C

TA = 150°C

NOTES: 1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

3. tp » trr

+10 V

2 k

820 W

0.1 mF

DUT

VR

100 mH

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

0

0.05

VF, FORWARD VOLTAGE (VOLTS)

0.1

10

1.0

0.1

85°C

10

0

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

1.0

0

VR, REVERSE VOLTAGE (VOLTS)

0.5

0

2.0

4.0

Figure 2. Typical Forward Voltage

Figure 3. Reverse Current versus Reverse Voltage

Figure 4. Typical Capacitance

−40 °C

25°C

−55 °C

150 °C

125 °C

100

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10

1.0

1.5

2.0

2.5

3.0

6.0

8.0

10

12

14

16

18

Nº de peça semelhante - MMBD717LT1G

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ON Semiconductor	MMBD717LT1G	96Kb / 3P	Common Anode Schottky Barrier Diodes December, 2011 ??Rev. 9

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