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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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MMBT4401 Folha de dados(PDF) 2 Page - Unisonic Technologies |
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MMBT4401 Folha de dados(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page  MMBT4401 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R206-035,B ABSOLUTE MAXIMUM RATING* (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA Total Device Dissipation Derate above 25℃ PD 350 2.8 mW mW/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (Ta=25℃, unless otherwise specified) CHARACTERISTIC SYMBOL RATING UNIT Thermal Resistance, Junction to Ambient θJA 357 ℃ /W ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=0.1mA, IE=0 60 V Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA, IB=0 40 V Emitter-Base Breakdown Voltage BVEBO IE=0.1mA, IC=0 6 V Collector Cut-off Current ICEX VCE=35V, VEB=0.4V µA Base Cut-off Current IBL VCE=35V, VEB=0.4V µA ON CHARACTERISTICS (note) hFE1 VCE=1V, IC=0.1mA 20 hFE2 VCE=1V, IC=1mA 40 hFE3 VCE=1V, IC=10mA 80 hFE4 VCE=1V, IC=150mA 100 300 DC Current Gain hFE5 VCE=2V, IC=500mA 40 Collector-Emitter Saturation Voltage VCE(SAT1) VCE(SAT2) IC=150mA, IB=15mA IC=500mA, IB=50mA 0.4 0.75 V V Base-Emitter Saturation Voltage VBE(SAT1) VBE(SAT2) IC=150mA, IB=15mA IC=500mA, IB=50mA 0.75 0.95 1.2 V V SMALL SIGNAL CHARACTERISTICS1 Current Gain Bandwidth Product fT VCE=10V, IC=20mA, f=100MHz 250 MHz Collector-Base Capacitance Ccb VCB=5V, IE=0, f=140kHz 6.5 pF Emitter-Base Capacitance Ceb VBE=0.5V, IC=0, f=140kHz 30 pF Input Impedance hie VCE=10V, IC=1mA, f=1kHz 1 15 kΩ Voltage Feedback Ratio hre VCE=10V, IC=1mA, f=1kHz 0.1 8 ×10 -4 Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 40 500 Output Admittance hoe VCE=10V, IC=1mA, f=1kHz 1 30 µmhos SWITCHING CHARACTERISTICS Delay Time tD VCC=30V, VEB=2V IC=150mA IB1=15mA 15 ns Rise Time tR VCC=30V, VEB=2V IC=150mA IB1=15mA 20 ns Storage Time tS 225 ns Fall Time tF VCC=30V, IC=150mA IB1= IB2=15mA 30 ns Note: Pulse test: PulseWidth≤300 µs, Duty Cycle≤2% |
Nº de peça semelhante - MMBT4401 |
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Descrição semelhante - MMBT4401 |
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