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2SD1802 Folha de dados(PDF) 1 Page - Unisonic Technologies |
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2SD1802 Folha de dados(HTML) 1 Page - Unisonic Technologies |
1 / 4 page UTC2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R213-003,A HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES *Adoption of FBET, MBIT processes *Large current capacity and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed TO-251 1 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Power Dissipation Tc=25 °C Pc 1 15 W W Collector Current(DC) Ic 3 A Collector Current(PULSE) Icp 6 A Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cutoff Current ICBO VCB=40V,IE=0 1 µA Emitter Cutoff Current IEBO VEB=4V,IC=0 1 µA DC Current Gain (note) hFE1 hFE2 VCE=2V, Ic=100mA VCE=2V, Ic=3A 100 35 560 Gain-Bandwidth Product fT VCE=10V,IC=50mA 150 MHz Output Capacitance Cob VCB=10V,f=1MHz 25 pF C-E Saturation Voltage VCE(sat) IC=2A,IB=100mA 0.19 0.5 V B-E Saturation Voltage VBE(sat) IC=2A,IB=100mA 0.94 1.2 V C-B Breakdown Voltage V(BR)CBO IC=10µA,IE=0 60 V C-E Breakdown Voltage V(BR)CEO IC=1mA,RBE=∞ 50 V E-B Breakdown Voltage V(BR)EBO IE=10µA,IC=0 6 V Turn-on Time ton See test circuit 70 ns Storage Time tstg See test circuit 650 ns Fall Time tf See test circuit 35 ns |
Nº de peça semelhante - 2SD1802 |
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Descrição semelhante - 2SD1802 |
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