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BY278 Folha de dados(PDF) 2 Page - NXP Semiconductors |
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BY278 Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 Sep 26 2 Philips Semiconductors Product specification Damper diode BY278 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack • Also available with preformed leads for easy insertion. APPLICATIONS • Damper diode in high frequency horizontal deflection circuits up to 16 kHz. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD64) and symbol. 2/3 page (Datasheet) MAM104 ka , , LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 1700 V VRRM repetitive peak reverse voltage − 1700 V VR continuous reverse voltage − 1650 V IFWM working peak forward current Tamb =75 °C; PCB mounting (see Fig.4); see Fig.2 − 5A IFRM repetitive peak forward current − 10 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax − 50 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 5 A; Tj =Tj max; see Fig.3 1.4 V IF = 5 A; see Fig.3 1.5 V IR reverse current VR =VRmax; Tj = 150 °C 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.6 1 µs tfr forward recovery time when switched to IF = 5 A in 50 ns; Tj =Tj max; Fig.7 1 µs |
Nº de peça semelhante - BY278 |
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Descrição semelhante - BY278 |
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