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BY329-1500S Folha de dados(PDF) 2 Page - NXP Semiconductors |
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BY329-1500S Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 5 page Philips Semiconductors Product specification Damper diode BY329-1500, BY329-1500S fast, high-voltage STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BY329 1500 1500S 1500 1500S V F Forward voltage I F = 6.5 A 1.1 1.3 1.45 1.6 V I F = 6.5 A; Tj = 125 ˚C 1.05 1.2 1.35 1.5 V I R Reverse current V R = 1300 V - 250 - 250 µA V R = 1300 V; Tj = 125 ˚C - 1 - 1 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BY329 1500 1500S 1500 1500S t rr Reverse recovery time I F = 1 A; VR ≥ 30 V; 0.18 0.13 0.23 0.16 µs dI F/dt = 50A/µs Q s Reverse recovery charge I F = 2 A; -dIF/dt = 20 A/µs 1.6 0.7 2.0 0.95 µC V fr Peak forward recovery voltage I F = 6.5A; dIF/dt = 50A/µs 17 233040 V t fr Forward recovery time I F = 6.5A; dIF/dt = 50A/µs 210 220 300 320 ns Fig.1. Definition of Vfr and tfr Fig.2. Definition of t rr and Qs time time V F V fr V F I F 10% 5V tfr 100% time dI dt F I R I F trr 25% Qs September 1998 2 Rev 1.100 |
Nº de peça semelhante - BY329-1500S |
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Descrição semelhante - BY329-1500S |
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