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CAT521 Folha de dados(PDF) 2 Page - Catalyst Semiconductor

Nome de Peças. CAT521
descrição  Configured Digitally Programmable Potentiometer
Download  10 Pages
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Fbricantes  CATALYST [Catalyst Semiconductor]
Página de início  http://www.catalyst-semiconductor.com
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CAT521 Folha de dados(HTML) 2 Page - Catalyst Semiconductor

 
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CAT521
2
Doc. No. 2003, Rev. F
Symbol
Parameter
Conditions
Min
Typ
Max
Units
IDD1
Supply Current (Read)
Normal Operating
400
600
µA
IDD2
Supply Current (Write)
Programming, VDD = 5V
1600
2500
µA
VDD = 3V
1000
1600
µA
VDD
Operating Voltage Range
2.7
5.5
V
ABSOLUTE MAXIMUM RATINGS
Supply Voltage*
VDD to GND ...................................... -0.5V to +7V
Inputs
CLK to GND ............................ -0.5V to VDD +0.5V
CS to GND .............................. -0.5V to VDD +0.5V
DI to GND ............................... -0.5V to VDD +0.5V
RDY/BSY to GND ................... -0.5V to VDD +0.5V
PROG to GND ........................ -0.5V to VDD +0.5V
VREFH to GND ........................ -0.5V to VDD +0.5V
VREFL to GND ......................... -0.5V to VDD +0.5V
Outputs
D0 to GND ............................... -0.5V to VDD +0.5V
VOUT 1– 4 to GND ................... -0.5V to VDD +0.5V
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix) ...... 0
°C to +70°C
Industrial (‘I’ suffix) ........................ -40
°C to +85°C
Junction Temperature ..................................... +150
°C
Storage Temperature ........................ -65
°C to +150°C
Lead Soldering (10 sec max) .......................... +300
°C
* Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Absolute
Maximum Ratings are limited values applied individually while
other parameters are within specified operating conditions,
and functional operation at any of these conditions is NOT
implied. Device performance and reliability may be impaired by
exposure to absolute rating conditions for extended periods of
time.
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min
Max
Units
Test Method
VZAP(1)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
ILTH(1)(2)
Latch-Up
100
mA
JEDEC Standard 17
NOTES: 1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC + 1V.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VOH
High Level Output Voltage
IOH = -40
µAVDD -0.3
V
VIL
Low Level Output Voltage
IOL = 1 mA, VDD = +5V
0.4
V
IOL = 0.4 mA, VDD = +3V
0.4
V
LOGIC INPUTS
Symbol
Parameter
Conditions
Min
Typ
Max
Units
IIH
Input Leakage Current
VIN = VDD
——
10
µA
IIL
Input Leakage Current
VIN = 0V
-10
µA
VIH
High Level Input Voltage
2
VDD
V
VIL
Low Level Input Voltage
0
0.8
V
POWER SUPPLY
LOGIC OUTPUTS


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