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CAT5112_04 Datasheet(Folha de dados) 3 Page - Catalyst Semiconductor

Nome de Peças. CAT5112_04
descrição  32-Tap Digitally Programmable Potentiometer
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Fbricantes  CATALYST [Catalyst Semiconductor]
Página de início  http://www.catalyst-semiconductor.com
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CAT5112
3
Doc. No. 2002, Rev. L
Power Supply
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VCC
Operating Voltage Range
2.5
6.0
V
ICC1
Supply Current (Increment)
VCC = 6V, f = 1MHz, IW=0
——
200
µA
VCC = 6V, f = 250kHz, IW=0
——
100
ICC2
Supply Current (Write)
Programming, VCC = 6V
——
1mA
VCC = 3V
——
500
µA
ISB1 (2)
Supply Current (Standby)
CS=VCC-0.3V
75
150
µA
U/D, INC=VCC-0.3V or GND
OPERATING MODES
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
VCC to GND
-0.5V to +7V
Inputs
CS to GND
-0.5V to VCC +0.5V
INC to GND
-0.5V to VCC +0.5V
U/
D to GND
-0.5V to VCC +0.5V
RH to GND
-0.5V to VCC +0.5V
RL to GND
-0.5V to VCC +0.5V
RWB to GND
-0.5V to VCC +0.5V
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix)
0
°C to +70°C
Industrial (‘I’ suffix)
-40
°C to +85°C
Junction Temperature
+150
°C
Storage Temperature
-65
°C to +150°C
Lead Soldering (10 sec max)
+300
°C
* Stresses above those listed under Absolute Maximum Ratings may
cause permanent damage to the device. Absolute Maximum Ratings
are limited values applied individually while other parameters are
within specified operating conditions, and functional operation at any
of these conditions is NOT implied. Device performance and reliability
may be impaired by exposure to absolute rating conditions for extended
periods of time.
NOTES:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC + 1V
(3) IW=source or sink
(4) These parameters are periodically sampled and are not 100% tested.
RL
CL
CH
RH
CW
RWB
Rwi
Potentiometer
Equivalent Circuit
INC
CS
U/D
Operation
High to Low
Low
High
Wiper toward H
High to Low
Low
Low
Wiper toward L
High
Low to High
X
Store Wiper Position
Low
Low to High
X
No Store, Return to Standby
X
High
X
Standby
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Test Method
Min
Typ
Max
Units
VZAP(1)
ESD Susceptibility
MIL-STD-883, Test Method 3015
2000
Volts
ILTH(1)(2)
Latch-Up
JEDEC Standard 17
100
mA
TDR
Data Retention
MIL-STD-883, Test Method 1008
100
Years
NEND
Endurance
MIL-STD-883, Test Method 1003
1,000,000
Stores
DC Electrical Characteristics: VCC = +2.5V to +6.0V unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
IIH
Input Leakage Current
VIN = VCC
——
10
µA
IIL
Input Leakage Current
VIN = 0V
——
–10
µA
VIH1
TTL High Level Input Voltage
4.5V
≤ VCC ≤ 5.5V
2
VCC
V
VIL1
TTL Low Level Input Voltage
0
0.8
V
VIH2
CMOS High Level Input Voltage
2.5V
≤ VCC ≤ 6V
VCC x 0.7
VCC + 0.3
V
VIL2
CMOS Low Level Input Voltage
-0.3
VCC x 0.2
V
Logic Inputs




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